Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-10-26

2011-11-08

Hoang, Quoc (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000

Reexamination Certificate

active

08053312

ABSTRACT:
A semiconductor device and a method for fabricating the same are provided. The method includes: forming a plurality of protruded patterns smaller than gate structures by selectively removing predetermined portions of a substrate; and forming the gate structures over the protruded patterns. The semiconductor device includes: a plurality of protruded substrate portions smaller than the gate structures; and a plurality of gate structures encompassing the protruded substrate portions, wherein channels are formed on surfaces of the protruded substrate portion.

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patent: 2003/0068875 (2003-04-01), Son
patent: 2003/0107088 (2003-06-01), Inumiya et al.
patent: 2004/0016956 (2004-01-01), Choi et al.
patent: 10-2001-0075260 (2001-08-01), None

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