Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2008-06-30

2011-12-27

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000

Reexamination Certificate

active

08084325

ABSTRACT:
A semiconductor device can prevent exposure of an inner wall of a recess pattern caused by misalignment between masks. A gate electrode is formed inside the recess pattern so that only a gate hard mask layer is exposed above a substrate surface. Since the gate electrode is not exposed above the substrate, it is possible to prevent SAC failure and decrease an aspect ratio of a gate pattern to increase an open margin of a contact hole. Thus, a semiconductor device having a recess channel gate structure which exhibits a superior refresh property is fabricated.

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