Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-12-06

2010-10-26

Bryant, Kiesha R (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C257SE21396, C257SE21008

Reexamination Certificate

active

07820507

ABSTRACT:
A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes: an inter-layer dielectric (ILD) layer formed on a semiconductor substrate; a contact plug formed in the ILD layer, such that a predetermined portion of the contact plug protrudes above the ILD layer; an etch stop layer formed on the ILD layer exposing a top portion of the contact plug; and a bottom electrode of a capacitor formed partially in the etch stop layer to be isolated from the ILD layer by the etch stop layer and the contact plug to prevent a direct contact with the ILD layer, and to be partially contacted with the contact plug.

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