Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-12-22
2009-10-13
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S238000, C438S618000, C438S629000, C438S637000, C257S296000, C257S773000, C257SE27084, C257SE27097, C257SE21645, C257SE21646, C257SE21656, C257SE21660
Reexamination Certificate
active
07601630
ABSTRACT:
A method of fabricating a semiconductor memory device and a structure that forms both a resistor and an etching protection layer to reduce a contact resistance. The method of fabricating a semiconductor memory device according to the invention includes forming an insulation layer on a semiconductor substrate having a cell array region, a core region, and a peripheral region, each having at least one transistor formed therein, and forming both a first landing pad in the core region on the insulation layer and a second landing pad in the peripheral region, the first landing pad being overlapped with a part of a first conductive line. The invention reduces the contact resistance and prevents or minimizes a device failure caused by a misalignment, with the simplified process.
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English language abstract of Korean Publication No. 10-2002-0096093.
Hwang Yoo-Sang
Park Je-Min
Shin Dong-Won
Ho Hoang-Quan T
Huynh Andy
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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