Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2004-03-15

2008-10-07

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000, C438S396000

Reexamination Certificate

active

07432151

ABSTRACT:
A method for fabricating a semiconductor device that forms a capacitor and metal interconnection in the same level, simultaneously using a damascene process for forming a metal interconnection. A capacitor structure having the high capacitance needed for logic elements is obtained without increasing the number of layers for fabricating the capacitor by forming a three-dimensional capacitor in the damascene pattern while maintaining the conventional processes in a damascene interconnection process.

REFERENCES:
patent: 5449630 (1995-09-01), Lur et al.
patent: 6054172 (2000-04-01), Robinson et al.
patent: 6054173 (2000-04-01), Robinson et al.
patent: 6102993 (2000-08-01), Bhandari et al.
patent: 6117725 (2000-09-01), Huang
patent: 6126989 (2000-10-01), Robinson et al.
patent: 6159787 (2000-12-01), Aitken et al.
patent: 6211035 (2001-04-01), Moise et al.
patent: 6281541 (2001-08-01), Hu
patent: 6297155 (2001-10-01), Simpson et al.
patent: 6326303 (2001-12-01), Robinson et al.
patent: 6346454 (2002-02-01), Sung et al.
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6524926 (2003-02-01), Allman et al.
patent: 6596581 (2003-07-01), Park et al.
patent: 6686271 (2004-02-01), Raaijmakers et al.
patent: 2003/0234416 (2003-12-01), Thomas et al.
patent: 1020905 (2000-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4016039