Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-12-30
2008-08-26
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S391000, C438S430000
Reexamination Certificate
active
07416937
ABSTRACT:
A method creates semiconductor device in which a storage dielectric film and a storage electrode included in the capacitor is transferred from an inactive region of a semiconductor substrate to the active region thereof, i.e., into a device isolating trench such that the capacitor is prevented from unnecessarily occupying an active region of a semiconductor substrate while maintaining its proper function. In contrast to a conventional device where a capacitor is formed in the active region of the semiconductor substrate, to the capacitor is formed in the inactive region according to this process. Accordingly, the capacitor is able to maintain a trench structure without needing to perform a step of removal of a step height difference, and the active region is minimized in size. Therefore, without having a problem of a step height increase, a finished semiconductor device is able to accommodate modern demands for increased device interpretation.
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Dongbu Electronics Co. Ltd.
Lowe Hauptman & Ham & Berner, LLP
Thomas Toniae M.
Wilczewski M.
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