Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-15
2007-05-15
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21008, C257SE21011, C438S254000
Reexamination Certificate
active
10678530
ABSTRACT:
A semiconductor device and method for fabricating same according to an embodiment of the invention includes: preparing a semiconductor substrate having a first contact pad and a second contact pad; forming a first insulating film on the substrate; etching the first insulating film to form a groove-shaped bit line pattern and a contact exposing the first contact pad and the second contact pad, respectively; simultaneously forming a contact plug and a bit line in the contact and the bit line pattern, respectively, the contact plug and the bitline having upper surfaces that are coplanar; and forming a bottom electrode for a capacitor that is connected to the first contact pad.
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IBM Tech. Discl. Bull. vol. 19, No. 6, pp. 2047-2048 (Nov. 1976), (displayed on 1 page).
Jeong Mun-Mo
Lee Chang-Huhn
Everhart Caridad
Marger & Johnson & McCollom, P.C.
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