Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-03-13

2007-03-13

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S271000, C438S589000, C257SE21419, C257SE21384

Reexamination Certificate

active

10986495

ABSTRACT:
Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of the trench-gate conductive layer is formed higher than the main surface of the semiconductor substrate and the trench gate conductive layer and gate insulating film are formed in the trench and over the main surface of the semiconductor substrate at the periphery of the trench. In this method, a trench wherein a trench-gate is to be formed is formed on the main surface of the semiconductor substrate with the insulating film formed thereon with a mask; and the side surface of the insulating film is caused to retreat from the upper end of the trench by isotropic etching, whereby a gate insulating film and a conductive layer to be the trench gate are formed in the trench and over the main surface of the semiconductor substrate at the periphery of the trench. According to the present invention, occurrence of a source offset and damage of a gate insulating film can be prevented.

REFERENCES:
patent: 3975221 (1976-08-01), Rodgers
patent: 4003126 (1977-01-01), Holmes et al.
patent: 4084175 (1978-04-01), Ouyang
patent: 4272302 (1981-06-01), Jhabvala
patent: 4767722 (1988-08-01), Blanchard
patent: 5258332 (1993-11-01), Horioka et al.
patent: 5366914 (1994-11-01), Takahashi et al.
patent: 5578508 (1996-11-01), Baba et al.
patent: 5693569 (1997-12-01), Ueno
patent: 5733810 (1998-03-01), Baba et al.
patent: 5744826 (1998-04-01), Takeuchi
patent: 5753554 (1998-05-01), Park
patent: 5783491 (1998-07-01), Nakamura et al.
patent: 5817558 (1998-10-01), Wu
patent: 5970344 (1999-10-01), Kubo et al.
patent: 6307231 (2001-10-01), Numazawa et al.
patent: 6368920 (2002-04-01), Beasom
patent: 6455378 (2002-09-01), Inagawa et al.
patent: 6511886 (2003-01-01), Kim et al.
patent: 63-177565 (1988-07-01), None
patent: 07-045824 (1995-02-01), None
patent: 11-031815 (1999-02-01), None
patent: 11-074514 (1999-03-01), None

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