Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

1998-09-10

2000-04-18

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438182, 438574, 438950, H01L 21338

Patent

active

06051454&

ABSTRACT:
A lower resist film, which is made of PMMA for EB exposure and has a thickness of about 200 nm, is applied onto a substrate, and then an upper resist film to be exposed to i-rays is applied on the lower resist film. Thereafter, a mixed layer, in which the upper and lower resist films are mixed, is formed in the interface between the upper and lower resist films. Next, the upper resist film, except for the head-forming region thereof, is exposed to i-rays and developed, thereby forming an upper-layer opening. And then the mixed layer and a leg-forming region of the lower resist film are exposed to EB and developed, thereby forming a lower-layer opening having an upper part like a taper progressively expanding upward.

REFERENCES:
patent: 5304511 (1994-04-01), Sakai
patent: 5334542 (1994-08-01), Saito et al.
patent: 5583063 (1996-12-01), Samoto
patent: 5665518 (1997-09-01), Maeda et al.
patent: 5738975 (1998-04-01), Nakano et al.
S. Wolf et al., Silicon Processing for VLSI Era V.1, Lattice Press: CA, p. 429-430, Dec. 1986.

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