Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-04-03

2007-04-03

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21190

Reexamination Certificate

active

11262222

ABSTRACT:
A semiconductor device capable of preventing a bridge generation during performing an etching process to form a plurality of gate structures on a substrate divided into an active region and a field region and an electrical short between a contact plug and the individual gate structure in the field region and a method for fabricating the same are provided. The semiconductor device includes: a substrate provided with an active region and a field region; a field oxide layer formed in the field region in such a way that the field oxide layer is recessed to be lower than a surface of the substrate disposed in the active region; and a plurality of gate structures formed on the field oxide layer and the substrate in the active region.

REFERENCES:
patent: 6107157 (2000-08-01), Fazan et al.
patent: 10-0223936 (1999-07-01), None
patent: 2002-0056289 (2002-07-01), None
patent: 2003-0014857 (2003-02-01), None

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