Semiconductor device and method for fabricating the same

Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S014000, C438S017000

Reexamination Certificate

active

07001786

ABSTRACT:
On a substrate provided with a transistor, an electrode pad for product connected electrically to the transistor is formed. A metal bump is provided on a surface of the electrode pad for product. An electrode pad for test to be used specifically for a wafer-level burn-in, which is connected electrically to the transistor, is further formed on the substrate.

REFERENCES:
patent: 6451681 (2002-09-01), Geer
patent: 2002/0139976 (2002-10-01), Hembree et al.
patent: 2000-294607 (2000-10-01), None
patent: 2001-94043 (2001-04-01), None
patent: 2002-48839 (2002-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3707994

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.