Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-06-27

2006-06-27

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S530000

Reexamination Certificate

active

07067382

ABSTRACT:
As first thermal treatment for activating an impurity injected into a gate electrode, thermal treatment at a low temperature for a long time in which boron diffusion into each crystal grain in polysilicon hardly occurs and boron diffusion in each crystal boundary occurs is performed. Next, as second thermal treatment, thermal treatment at a high temperature for a short time, such as spike annealing and flash annealing, in which impurity diffusion into each crystal grain in a polysilicon layer occurs is performed.

REFERENCES:
patent: 5981347 (1999-11-01), Kuo et al.
patent: 6362511 (2002-03-01), Mizushima et al.
patent: 6770519 (2004-08-01), Ito et al.
patent: 6-275788 (1994-09-01), None

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