Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-21
2006-11-21
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C257SE27098
Reexamination Certificate
active
07138312
ABSTRACT:
The semiconductor device comprises a gate interconnection24aincluding a gate electrode formed over a semiconductor substrate14with a gate insulation film22formed therebetween; a first source/drain diffused layer28formed near the end of the gate interconnection24a; a second source/drain diffused layer34formed remote from the gate interconnection24aand the first source/drain diffused layer28; and an insulation film40formed over the gate interconnection24a, the first source/drain diffused layer28and the second source/drain diffused layer34, and having a groove-shaped opening42aformed in, which integrally exposes the gate interconnection24a, one of the first source/drain diffused layer28, and one of the second source/drain diffused layer34; and a contact layer48aburied in the groove-shaped opening42a. The groove-shaped openings42afor the contact layers48ato be buried in can be formed without failure. Accordingly, it is possible to provide a semiconductor device which can realize the micronization without reliability decrease and fabrication yield decrease.
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Minami Takayoshi
Setta Yuji
Hafiz Mursalin B.
Pham Hoai
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