Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-28
2006-11-28
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000, C438S291000, C438S289000
Reexamination Certificate
active
07141477
ABSTRACT:
Into a channel formation region of a semiconductor substrate of p-type silicon, indium ions are implanted at an implantation energy of about 70 keV and a dose of about 5×1013/cm2, thereby forming a p-doped channel layer. Next, germanium ions are implanted into the upper portion of the semiconductor substrate at an implantation energy of about 250 keV and a dose of about 1×1016/cm2, thereby forming an amorphous layer in a region of the semiconductor substrate deeper than the p-doped channel layer.
REFERENCES:
patent: 5171703 (1992-12-01), Lin et al.
patent: 6184112 (2001-02-01), Maszara et al.
patent: 6190179 (2001-02-01), Sundaresan
patent: 6333217 (2001-12-01), Umimoto et al.
patent: 6368928 (2002-04-01), Wang et al.
patent: 6432802 (2002-08-01), Noda et al.
patent: 6696341 (2004-02-01), Sonoda
patent: 2001/0041432 (2001-11-01), Lee
patent: 2002/0058385 (2002-05-01), Noda
patent: 8-250729 (1996-09-01), None
Noda et al., “Effects of end-of-rage dislocation loops on transient enhanced diffusion of indium implanted in silicon”, Journal of Applied Physics, pp. 4980-4984, Nov. 1, 2000.
T. Noda, “Modeling of End-of Range (EOR) Defects for Indium Channel Engineering”, Tech. Dig. IEDM, p. 839, 2001.
John, S et al.: “Strained Si n-channel metal-oxide-semiconductor transistor on relaxed Si1-xGex formed by ion implantation of Ge,” Applied Physics Letters, American Institute of Physics, Apr. 5, 1999, vol. 74, No. 14, pp. 2076-2078.
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