Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-20
2006-06-20
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S183000, C438S195000, C438S663000
Reexamination Certificate
active
07064038
ABSTRACT:
The method for fabricating a semiconductor device comprises the steps of: forming a dummy electrode22nand a dummy electrode22p; forming a metal film32on the dummy electrode22p; conducting a thermal treatment at a first temperature to substitute the dummy electrode22nwith an electrode34aof a material containing the constituent material of the metal film32; forming a metal film36on the dummy electrode22n; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrode34aand the metal film36does not take place, to substitute the second dummy electrode with an electrode34bof a material containing the constituent material of the metal film36.
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Kishii Sadahiro
Kudo Hiroshi
Naganuma Junko
Fujitsu Limited
Luu Chuong Anh
Westerman Hattori Daniels & Adrian LLP
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