Semiconductor device and method for fabricating the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S183000, C438S195000, C438S663000

Reexamination Certificate

active

07064038

ABSTRACT:
The method for fabricating a semiconductor device comprises the steps of: forming a dummy electrode22nand a dummy electrode22p; forming a metal film32on the dummy electrode22p; conducting a thermal treatment at a first temperature to substitute the dummy electrode22nwith an electrode34aof a material containing the constituent material of the metal film32; forming a metal film36on the dummy electrode22n; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrode34aand the metal film36does not take place, to substitute the second dummy electrode with an electrode34bof a material containing the constituent material of the metal film36.

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Murarka, S. P., “Silicides for VLSI Applications”, Academic Press, Inc., pp. 88˜95, 1983, (see pp. 3 and 44 in the spec.).
Qin M. et al., “Investigation of Polycrystalline Nickel Silicide films as a Gate Material”, Journal of The Electrochemical Society, 148 (5) (The Electrochemical Society, Inc.), pp. G271˜G274 (2001) (see pp. 3 and 49 in the spec.).

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