Semiconductor device and method for fabricating the same

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C716S030000, C716S030000

Reexamination Certificate

active

07089525

ABSTRACT:
The number of design processes for fabricating semiconductor devices can be reduced by parallel connection of a plurality of unit bipolar transistors Qu that are completely electrically isolated from each other in a semiconductor layer of an SOI substrate1to form a bipolar transistor having a large current capacity.

REFERENCES:
patent: 4746963 (1988-05-01), Uchida et al.
patent: 5214302 (1993-05-01), Uchida et al.
patent: 5663662 (1997-09-01), Kurosawa
patent: 6442735 (2002-08-01), Joshi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3615223

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.