Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-01
2005-02-01
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S785000
Reexamination Certificate
active
06849505
ABSTRACT:
Disclosed is a semiconductor device having a double dielectric layer, wherein the double dielectric layer comprises a first dielectric layer having aluminum and a second dielectric layer, of which a dielectric constant is higher than that of the first dielectric layer, stacked on the first dielectric layer. Also disclosed are methods for fabricating the semiconductor device.
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Notice of Preliminary Rejection from the Korean Intellectual Property Office, dated May 26, 2003, 2 pages, with English translation (1 page).
English abstract for KR 2000-0027836, 2 pages.
English abstract for KR 2001-0063468, 2 pages.
English abstract for KR 2000-0041370, 2 pages.
U.S. patent application Publication No. 2001/0013629 A1, published Aug. 16, 2001.
Lee Kee-Jeung
Oh Jong-Hyuk
Booth Richard A.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hynix / Semiconductor Inc.
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