Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-01
2005-02-01
Booth, Richard (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S287000, C438S585000
Reexamination Certificate
active
06849511
ABSTRACT:
A semiconductor device comprises a first transistor38ahaving a first gate electrode22; a second transistor38bhaving a second gate electrode34which is different from the first gate electrode; an insulation film28formed between the first gate electrode and the second gate electrode; and an interconnection electrode44buried in a concavity42formed in the first gate electrode, the second gate electrode and the insulation film and electrically interconnecting the first gate electrode and the second gate electrode. The interconnection electrode is buried in the concavity formed in the first gate electrode, the second gate electrode and the insulation film, and the interconnection electrodes electrically interconnects the first gate electrode and the second gate electrode, whereby the semiconductor device can have high integration and can be reliable.
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International Electron Device Meeting, “Technical Digest,” 1998 pp. 777-780.
Iriyama Yasunori
Izawa Tetsuo
Booth Richard
Pompey Ron
Westerman Hattori Daniels & Adrian LLP
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