Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-01-17
2000-06-20
Nelms, David
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438166, 438487, H01L 2100, H01L 2184
Patent
active
060777311
ABSTRACT:
A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus obtained is provided. The method for fabricating a semiconductor device comprises steps of intentionally introducing the metal element which promotes crystallization of silicon to the amorphous silicon film and crystallizing the amorphous silicon film by a first heat treatment to obtain the crystal silicon film; eliminating or reducing the metal element existing within the crystal silicon film by implementing a second heat treatment within an oxidizing atmosphere; eliminating a thermal oxide film formed in the previous step; and forming another thermal oxide film on the surface of the region from which the thermal oxide film has been eliminated by implementing another thermal oxidation.
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Hamatani Toshiji
Hayakawa Masahiko
Koyama Jun
Ogata Yasushi
Ohtani Hisashi
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Lebentritt Michael S.
Nelms David
Semiconductor Energy Laboratory Co,. Ltd.
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