Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-12-22
2000-11-28
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257333, 257355, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119
Patent
active
061539090
ABSTRACT:
Semiconductor device and a method for fabricating the same, which is suitable for reducing a hot carrier effect, the device including a first conduction type substrate, a gate insulting film formed on a region of the first conduction type substrate, a gate electrode formed on the gate insulating film, second conduction type impurity regions formed in regions of the substrate on both sides of the gate electrode, a barrier block formed in a portion of each of the second conduction type impurity regions, and source/drain electrodes formed in contact with the second conduction type impurity regions, respectively.
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Tasch et al. "Limitations of LDD Types of Structures in Deep-Submicrometer MOS Technology" IEEE Electron Device Letters, vol. 11, No. II, Nov. 1990, pp. 517-519.
Clark Sheila V.
LG Electronics Inc.
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