Semiconductor device and method for fabricating the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438305, H01L 21336

Patent

active

060837969

ABSTRACT:
A semiconductor device and a method for fabricating the same are disclosed that reduce short channel effects to improve device characteristics. The semiconductor device includes a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film and a lightly doped region formed in the semiconductor substrate at both sides of the gate electrode. A sidewall insulating film is formed at both sides of the gate electrode and a heavily doped impurity region is formed in the semiconductor substrate extending from the sidewall insulating film. Further, an insulating film is formed at sides of the heavily doped impurity region. The insulating film prevents impurity ions from the heavily doped impurity region from diffusing into the channel region of the device.

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patent: 5593928 (1997-01-01), Lee
patent: 5843826 (1998-12-01), Hong
patent: 5989965 (1999-11-01), Maa et al.

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