Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-05-15
2007-05-15
Clark, Jasmine (Department: 2815)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S637000, C438S670000, C438S674000, C438S675000, C438S697000, C438S735000, C438S737000, C438S738000
Reexamination Certificate
active
11077212
ABSTRACT:
There are provided a semiconductor device and method for fabricating the device capable of achieving reliable electrical connection by securely directly bonding conductors to each other even though bonding surfaces are polished by a CMP method and solid-state-bonded to each other. By polishing according to the CMP method, a through hole conductor5and a grounding wiring layer10,which are made of copper, become concave in a dish-like shape and lowered in level, causing a dishing portion17since they have a hardness lower than that of a through hole insulator11made of silicon nitride. The through hole insulator11is selectively etched by a reactive ion etching method until the through hole insulator11comes to have a height equal to the height of a bottom portion19of the dishing portion17of the through hole conductor5.The through hole conductors5and25are aligned with each other, and the bonding surfaces12and22are bonded to each other in a solid state bonding manner.
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Clark Jasmine
Fujitsu Limited
Matsushita Electric Industrial Co. Ltd
NEC Corporation
Nixon & Vanderhye P.C.
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