Semiconductor device and method for fabricating same

Details Semiconductor device and method for fabricating same Semiconductor device and method for fabricating same

2008-04-15

2008-04-15

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE21267

Reexamination Certificate

active

11250439

ABSTRACT:
A method is provided with:arranging nitrogen atoms on a surface of a silicon substrate;performing a heat treatment in a hydrogen atmosphere so that the nitrogen atoms and silicon atoms existing on the surface of the silicon substrate are brought into a three-coordinate bond state; andforming a silicon oxide film on the silicon substrate with the three-coordinate bond state of nitrogen atoms and the silicon atoms being maintained.

REFERENCES:
patent: 5464783 (1995-11-01), Kim et al.
patent: 5969397 (1999-10-01), Grider, III et al.
patent: 5972804 (1999-10-01), Tobin et al.
patent: 6252296 (2001-06-01), Umeda et al.
patent: 6417570 (2002-07-01), Ma et al.
patent: 6521912 (2003-02-01), Sakama et al.
patent: 6953727 (2005-10-01), Hori
patent: 2005/0106894 (2005-05-01), Aoki et al.
patent: 8-37184 (1996-02-01), None
patent: 10-163197 (1998-06-01), None
patent: 10-199878 (1998-07-01), None
patent: H11-121453 (1999-04-01), None
patent: 11-340224 (1999-12-01), None
patent: 2000-269355 (2000-09-01), None
patent: 2001-203198 (2001-07-01), None
Sukmin Jeong, et al., “Atomic and Electronic Structures of N-Incorporated Si Oxides”, Physical Review Letters, Apr. 16, 2001, v.86, pp. 3574-3577.
J. Stober, et al., “Initial Stages of the Thermal Nitridation of the Si(100) Surface with NH3and NO: A Surface Sensitive Study of Si 2p Core-Level Shifts”, Surface Science, 321 (1994) pp. 111-126.
U.S. Appl. No. 11/250,439, filed Oct. 17, 2005, Aoki et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method for fabricating same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3912076