Semiconductor device and method for fabricating same

Details Semiconductor device and method for fabricating same Semiconductor device and method for fabricating same

2007-01-09

2007-01-09

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE21193, C257SE29165

Reexamination Certificate

active

11020271

ABSTRACT:
An aspect of the present invention includes; a silicon oxynitride film having an oxynitride layer which is formed on at least the surface of a silicon substrate and in which nitrogen atoms are in a three-coordinate bond state, and a silicon oxide layer which is formed between said oxynitride layer and said silicon substrate.

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Sukmin Jeong, et al., “Atomic and Electronic Structures of N-Incorporated Si Oxides”, Physical Review Letters, Apr. 16, 2001, vol. 86, pp. 3574-3577.
J. Stober, et al., “Initial Stages of the Thermal Nitridation of the Si(100) Surface with NH3and NO: A Surface Sensitive Study of Si 2p Core-Level Shifts”, Surface Science, 321 (1993), pp. 111-126.
U.S. Appl. No. 11/250,439, filed Oct. 17, 2005, Aoki et al.

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