Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-08-05
1998-05-05
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438305, H01L 21336
Patent
active
057473722
ABSTRACT:
A semiconductor device includes a semiconductor substrate having low impurities of a first conductivity type including a field region and an active region, a first conductivity type region of high impurities at the field region of the semiconductor substrate, a first insulation film on the first conductivity type region of high impurities, a gate electrode at the active region of the semiconductor substrate, a second conductivity type region of high impurities on a central region of the semiconductor substrate between the gate electrode and the first insulation film, and second conductivity type regions of low impurities between the gate electrode and the second conductive type region of high impurities, and between the first insulation film and the second conductivity type region of high impurities.
REFERENCES:
patent: 4356042 (1982-10-01), Gedaly et al.
patent: 4356623 (1982-11-01), Hunter
patent: 4366613 (1983-01-01), Ogura et al.
patent: 4843023 (1989-06-01), Chui et al.
patent: 4859619 (1989-08-01), Wu et al.
patent: 4874713 (1989-10-01), Gioia
patent: 4945066 (1990-07-01), Kang et al.
patent: 5026656 (1991-06-01), Matloubian et al.
patent: 5122474 (1992-06-01), Harrington
patent: 5346835 (1994-09-01), Malhi et al.
patent: 5396096 (1995-03-01), Akamatsu et al.
patent: 5399513 (1995-03-01), Liou et al.
patent: 5464782 (1995-11-01), Koh
patent: 5474940 (1995-12-01), Tsukamoto et al.
patent: 5550074 (1996-08-01), Lin
patent: 5610088 (1997-03-01), Chang et al.
Lebentritt Michael S.
LG Semicon Co. Ltd.
Niebling John
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