Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-01
2011-03-01
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C438S272000, C438S369000, C257S330000, C257S335000, C257S492000, C257S506000, C257SE21410, C257SE21418, C257SE23009, C257SE29262
Reexamination Certificate
active
07897459
ABSTRACT:
A through electrode is formed prior to fabricating a semiconductor device by using a standard manufacturing method. Aside face of the through electrode is insulated from a semiconductor substrate by an insulating film, while the top face thereof is covered with a protective insulating film. These insulating films covering the through electrode protect a conductor of the through electrode and prevent emission of a contaminant from the conductor. Standard manufacturing conditions can be applied without change.
REFERENCES:
patent: 6376314 (2002-04-01), Jerred
patent: 2008/0160697 (2008-07-01), Kao
patent: 2009/0174080 (2009-07-01), Saito et al.
patent: 2003-332417 (2003-11-01), None
patent: 2004-221350 (2004-08-01), None
patent: 2005-38942 (2005-02-01), None
patent: 2005-236271 (2005-09-01), None
patent: 2005-243689 (2005-09-01), None
patent: 2006-19431 (2006-01-01), None
patent: 2006-19455 (2006-01-01), None
patent: 2006-114686 (2006-04-01), None
Elpida Memory Inc.
Nguyen Dao H
Sughrue & Mion, PLLC
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