Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2008-12-12

2011-11-29

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S104000, C438S795000, C257SE21411, C257SE21413

Reexamination Certificate

active

08067276

ABSTRACT:
An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

REFERENCES:
patent: 2007/0072439 (2007-03-01), Akimoto et al.
patent: 2007/0241327 (2007-10-01), Kim et al.
patent: 2007123861 (2007-05-01), None
patent: 2007258675 (2007-10-01), None
patent: 1020070103231 (2007-10-01), None
G V Samsonov,“Tables 1 and 2, excerpted from The Oxide Handbook”, New York 1982.

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