Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2010-08-11

2011-12-27

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S348000, C257S379000, C257S380000, C257SE27035

Reexamination Certificate

active

08084314

ABSTRACT:
A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on the high resistance element. A hydrogen diffusion preventing film having a hydrogen diffusion coefficient smaller than that of the second insulation film is provided on the second insulation film. The hydrogen diffusion preventing film covers a part of the high resistance element.

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