Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-05-25

2010-11-09

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C257S903000, C257SE21661, C257SE27098, C365S063000

Reexamination Certificate

active

07830703

ABSTRACT:
A semiconductor device having SRAM cell units each comprising a pair of a first driving transistor and a second driving transistor, a pair of a first load transistor and a second load transistor, and a pair of a first access transistor and a second access transistor, wherein each of the transistors comprises a semiconductor layer projecting upward from a substrate plane, a gate electrode extending on opposite sides of the semiconductor layer so as to stride over a top of the semiconductor layer, a gate insulating film interposed between the gate electrode and the semiconductor layer, and a pair of source/drain areas formed in the semiconductor layer; and the first and second driving transistors each have a channel width larger than that of at least either each of the load transistors or each of the access transistors.

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