Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-28
2009-02-10
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S598000, C257S678000, C257S686000
Reexamination Certificate
active
07488674
ABSTRACT:
When forming a silicon nitride film to protect and insulate a surface on which a silicon substrate has been ground or polishing, by use of a mixed gas containing SiH4, N2, and NH3as a reaction gas, a film is formed by a single-frequency parallel-plate plasma CVD method. Thereby, even when the film forming temperature is made not more than an allowable temperature limit of an adhesive to adhere a support (for example, approximately 100° C. or less, which is an allowable temperature limit when the adhesive is an ultraviolet curing resin), a high-quality film without exfoliation in a CMP step of the following step and with less leakage can be formed. This high-quality film is, if being prescribed by a refractive index, a film whose refractive index with respect to a wavelength of 633 nm is approximately 1.8 through 1.9.
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Dang Phuc T
McGinn IP Law Group PLLC
Nec Electronics Corporation
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