Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2004-10-01

2008-12-23

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S306000

Reexamination Certificate

active

07468303

ABSTRACT:
Junction leakage in a medium voltage MOS transistor having a silicide structure is prevented. A titanium layer is formed by sputtering titanium over the entire surface of a semiconductor substrate. A gate electrode makes contact with the titanium layer through an opening and P+-type diffusion layers make contact with the titanium layer through openings. In subsequent heat treatment, portions of the titanium layer contacting the gate electrode or each of the P+-type diffusion layers are changed into silicide, forming titanium silicide layers on the gate electrode and the P+-type diffusion layers. Then the rest of the titanium layer, which is on the silicide block layer and not changed into silicide, is removed by wet-etching.

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