Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-06-15

2008-09-09

Cao, Phat X (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S196000, C438S275000, C257SE21611

Reexamination Certificate

active

07422937

ABSTRACT:
A semiconductor device manufacturing method including forming at least a first conductive film and a first insulting film above a semiconductor substrate, forming a plurality of first resist patterns above the first insulating film periodically at first intervals, patterning at least the first insulting film by use of the first resist patterns to form a plurality of mask patterns, each of the mask patterns including the first insulating film, selectively forming a second resist pattern in a space between the mask patterns in such a manner that the second resist pattern is formed in the space corresponding to a region where a second wiring structure wider than the first wiring structure is to be formed, and patterning the first conductive film by use of the second resist pattern and the mask patterns.

REFERENCES:
patent: 7241651 (2007-07-01), Miwa
patent: 2006/0081914 (2006-04-01), Miwa
patent: 56-137632 (1981-10-01), None
patent: 11-177070 (1999-07-01), None
patent: 2000-22113 (2000-01-01), None
patent: 2002-176114 (2002-06-01), None
patent: 2003-7870 (2003-01-01), None
patent: 2003-51557 (2003-02-01), None
patent: 10-0190021 (1999-01-01), None

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