Semiconductor device and manufacturing method thereof

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S460000

Reexamination Certificate

active

10910805

ABSTRACT:
A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.

REFERENCES:
patent: 6316287 (2001-11-01), Zandman et al.
patent: 2004/0161920 (2004-08-01), Noma
patent: 2004/0235270 (2004-11-01), Noma et al.
patent: 09-063993 (1997-03-01), None
patent: 2002-512436 (2002-04-01), None
patent: 99/40624 (1999-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3894673

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.