Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-31
2006-10-31
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S597000, C438S786000, C438S788000
Reexamination Certificate
active
07129125
ABSTRACT:
A semiconductor device comprises a semiconductor region including silicon, and an insulating film including silicon, oxygen, nitrogen, and helium, the dielectric film provided on the semiconductor region, and the dielectric film having a concentration distribution with respect to a film thickness direction, the concentration distribution having a maximal value of concentration of the helium in a surface portion on the semiconductor region side and a maximal value of concentration of the nitrogen in a surface portion on a side opposite to the semiconductor region.
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Yasuda, Y. et al., “Radical Nitridation in Multi-Oxide Process for 100nm Generation CMOS Technology”, 2001 Symposium on VLSI Technology Digest of Technical Papers, 2 pages, (2001).
Chen, C. H. et al., “Downscaling Limit of Equivalent Oxide Thickness in Formation of Ultrathin Gate Dielectric by Thermal-Enhanced Remote Plasma Nitridation”, IEEE Transactions on Electron Devices, vol. 49, No. 5, pp. 840-846, (May 2002).
Notification of Reasons for Rejection in Japanese Patent App. No. 2003-49611, mailed Jan. 31, 2006 (4 pages).
Inumiya Seiji
Mizushima Ichiro
Sekine Katsuyuki
Brewster William M.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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