Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-08-22

2006-08-22

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C438S011000, C438S014000, C438S613000

Reexamination Certificate

active

07095045

ABSTRACT:
A semiconductor device includes a substrate, a pad electrode formed on the substrate and a bump electrode formed on the pad electrode, wherein the pad electrode has an irregular flaw, and there is provided a pattern covering the irregular flaw between the pad electrode an the bump electrode.

REFERENCES:
patent: 5854513 (1998-12-01), Kim
patent: 6150727 (2000-11-01), Takagi
patent: 6251694 (2001-06-01), Liu et al.
patent: 6782895 (2004-08-01), Van Nguyen et al.
patent: 6782897 (2004-08-01), Wang et al.
patent: 61-253847 (1986-11-01), None
patent: 1-295444 (1989-11-01), None
patent: 9-232392 (1997-09-01), None
patent: 11-67775 (1999-03-01), None
European Patent Office Action dated Apr. 25, 2006, issued in corresponding European Patent Application No. 02738780.2.

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