Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-05-10

2005-05-10

Niebling, John F (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S302000, C438S303000

Reexamination Certificate

active

06890824

ABSTRACT:
After forming a gate electrode on a semiconductor substrate, ion implantation is performed on the semiconductor substrate by using the gate electrode as a mask to form low concentration impurity regions, and thereafter first sidewall insulating films are formed on the side surfaces of the gate electrode. Next, by using the gate electrode and the first sidewall insulating films as a mask, ion implantation is performed on the semiconductor substrate to form high concentration impurity regions, and thereafter second sidewall insulating films are formed on the side surfaces of the first sidewall insulating films. After that, by using each sidewall insulating film as a mask, metal silicide layers are selectively formed on each surface of the semiconductor substrate and the gate electrode.

REFERENCES:
patent: 5-3206 (1993-01-01), None
patent: 05-326552 (1993-12-01), None
patent: 7-106567 (1995-04-01), None
patent: 8-279597 (1996-10-01), None
patent: 9-199720 (1997-07-01), None
patent: 10-98186 (1998-04-01), None
patent: 11-126900 (1999-05-01), None
patent: 11-317458 (1999-11-01), None

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