Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With stress relief
Reexamination Certificate
2005-09-20
2005-09-20
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
With stress relief
C257S738000, C257S780000, C257S787000, C438S123000, C438S124000
Reexamination Certificate
active
06946723
ABSTRACT:
A semiconductor device having a semiconductor element is obtained by cutting a semiconductor wafer, having an electrode pad formed on one side thereof, along a scribe line. The semiconductor device has a semiconductor element protective layer on the semiconductor element so as to form an opening above the pad, a stress cushioning layer on the layer so as to form an opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and a conductor protective layer on the layer. The layer, the layer, and the conductor protective layer form respective end faces on the end surface of the semiconductor element inside the scribe line and expose a surface of the semiconductor element from the end face of the end surface to a point inside of the scribe line, thereby to expose the scribe line.
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Anjo Ichiro
Kazama Atsushi
Nishimura Asao
Ogino Masahiko
Satoh Toshiya
Antonelli Terry Stout & Kraus LLP
Diaz José R.
Renesas Technology Corp.
Thomas Tom
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