Semiconductor device and manufacturing method thereof

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure

Reexamination Certificate

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Details

C438S106000, C438S127000, C257S787000, C257S678000, C257SE21599

Reexamination Certificate

active

07378333

ABSTRACT:
The present invention is a semiconductor device having the semiconductor element obtained by cutting a semiconductor wafer with the electrode pad formed on one side along a scribe line, a semiconductor element protective layer on the semiconductor element which has a opening on the pad, a stress cushioning layer on the layer which has the opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and the conductor protective layer on the layers, the layer and the conductor protective layer forming the respective end faces on the end surface of the semiconductor element inside the scribe line and exposing the range from the end face of the end surface to the inside of the scribe line.

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Nikkei Microdevices, CSP, Feb. 1998, pp. 40-64.
Nikkei Microdevices, CSP, Apr. 1998, pp. 164-167.

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