Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-06-07

2011-06-07

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S331000, C257SE21419, C257SE21429

Reexamination Certificate

active

07955930

ABSTRACT:
A semiconductor substrate has a trench in a first main surface. An insulated gate field effect part includes a gate electrode formed in the first main surface. A potential fixing electrode fills the trench and has an expanding part expanding on the first main surface so that a width thereof is larger than the width of the trench. An emitter electrode is formed on the first main surface and insulated from the gate electrode electrically and connected to a whole upper surface of the expanding part of the potential fixing electrode. Thus, a semiconductor device capable of enhancing reliability in order to prevent an aluminum spike from generating and a manufacturing method thereof can be provided.

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