Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-08
2005-02-08
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C438S640000, C438S667000
Reexamination Certificate
active
06852621
ABSTRACT:
A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.
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IBM Technical Bulletin, vol. 34, Issue No. 34, pp. 416-418, Dec. 1, 1991.
Hanaoka Terunao
Hashimoto Nobuaki
Ito Haruki
Matsushima Fumiaki
Umetsu Kazushige
Coleman W. David
Nguyen Khiem
Oliff & Berridg,e PLC
Seiko Epson Corporation
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