Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-05-17
2005-05-17
Pham, Long (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S592000
Reexamination Certificate
active
06893980
ABSTRACT:
According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.
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English-Ianguage translation of Office Action dated Mar. 20, 2004, from the Japanese Patent Office in Japanese Application No. 1997-149161.
Akasaka Yasushi
Miyano Kiyotaka
Nakajima Kazuaki
Suguro Kyoichi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Pham Long
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