Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

1997-12-02

2000-12-19

Fourson, George

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438592, H01L 218232

Patent

active

061627410

ABSTRACT:
According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.

REFERENCES:
patent: 4074300 (1978-02-01), Sakai et al.
patent: 4505028 (1985-03-01), Kobayashi et al.
patent: 5907188 (1999-05-01), Nakajima et al.

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