Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-30
2010-10-26
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S288000, C257S310000, C257SE29127
Reexamination Certificate
active
07820503
ABSTRACT:
An object of the present invention is to simplify manufacturing process of an n channel MIS transistor and a p channel MIS transistor with gate electrodes formed of a metal material. For its achievement, gate electrodes of each of the n channel MIS transistor and the p channel MIS transistor are simultaneously formed by patterning ruthenium film deposited on a gate insulator. Next, by introducing oxygen into each of the gate electrodes, the gate electrodes are transformed into those having high work function. Thereafter, by selectively reducing the gate electrode of the n channel MIS transistor, it is transformed into a gate electrode having low work function.
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Cartier, E. et al, “Role of Oxygen Vacancies in VFB/Vtstability of pFET metals on HfO2”, 2005 Symposium on VLSI Technology Digest of Technical Papers, IBM Semiconductor Research and Development Center (SRDC), Research Division, T.J. Watson Research Center, IBM Systems and Technology Division, pp. 230-231.
Kadoshima Masaru
Nabatame Toshihide
Takaba Hiroyuki
A. Marquez, Esq. Juan Carlos
Patton Paul E
Renesas Electronics Corporation
Smith Zandra
Stites & Harbison PLLC
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