Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2011-03-22

2011-03-22

Pert, Evan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29156, C438S649000

Reexamination Certificate

active

07911004

ABSTRACT:
A semiconductor device includes a gate electrode line provided to extend from an N-type area through a device isolation area to a P-type area, and source/drain diffused regions formed in N-type and P-type areas. The gate electrode line includes a first silicide region which configures a P-type MOSFET gate electrode and includes therein a silicide of metal M1, a second silicide region which configures an N-type MOSFET gate electrode and includes therein a silicide of metal M2, and an impurity-doped silicon region which is provided on a device isolation area and includes therein impurities at a higher concentration than both the gate electrodes.

REFERENCES:
patent: 4786611 (1988-11-01), Pfiester
patent: 2002/0093051 (2002-07-01), Nohsoh et al.
patent: 2007/0069304 (2007-03-01), Aida et al.
patent: 8-130216 (1996-05-01), None
patent: 9-82810 (1997-03-01), None
patent: 2002-217310 (2002-08-01), None
patent: 2006-108469 (2006-04-01), None
patent: 2007-88372 (2007-04-01), None
patent: 1020010064414 (2001-07-01), None
patent: WO 2006/001271 (2006-01-01), None
International electron devices meeting technical digest, 2002, p. 35.
International electron devices meeting technical digest, 1985, p. 41.
International electron devices meeting technical digest, 2002, p. 24.
International electron devices meeting technical digest, 2003, p. 31.
International electron devices meeting technical digest, 2004, p. 91.
Korean Offical Action - 10-2008-7031065 - Oct. 28, 2010.

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