Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-06-28
2011-06-28
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S288000, C438S206000
Reexamination Certificate
active
07968396
ABSTRACT:
A semiconductor device includes a semiconductor layer formed on an insulating layer; a gate electrode disposed on said semiconductor layer via a gate insulating film; a source/drain layer composed by including an alloy layer or a metal layer with a bottom surface in contact with the insulating layer, with joint surfaces to a channel region disposed along crystal orientation faces of said semiconductor layer; and impurity-doped layers formed in a self-aligned manner along interfaces of the alloy layer or the metal layer, and said semiconductor layer.
REFERENCES:
patent: 6787827 (2004-09-01), Inumiya et al.
patent: 7145191 (2006-12-01), Teng et al.
patent: 2001/0028087 (2001-10-01), Hirashita et al.
patent: 2003/0008496 (2003-01-01), Deleonibus
patent: 2004/0142546 (2004-07-01), Kudo et al.
patent: A-2002-110991 (2002-04-01), None
Ichimori et al; Structural Study of Single {111}-Facetted CoSi2/Si Interface Incorporated in a Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistor; J.J. Appl. Phys.; vol. 40; (2001); pp. L1019-L1021.
Migita Shinji
Mise Nobuyuki
Watanabe Yukimune
Diallo Mamadou
Oliff & Berridg,e PLC
Renesas Technology Corporation
Richards N Drew
Seiko Epson Corporation
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