Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-10-29
2009-06-16
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000, C257S306000, C257S309000, C257SE21010, C257SE21272
Reexamination Certificate
active
07547933
ABSTRACT:
There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
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Dote Aki
Horii Yoshimasa
Kurasawa Masaki
Nakamura Ko
Nomura Kenji
Erdem Fazli
Fujitsu Microelectronics Limited
Purvis Sue
Westerman, Hattori, Daniels & Adrian , LLP.
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