Semiconductor device and manufacturing method

Details Semiconductor device and manufacturing method Semiconductor device and manufacturing method

2005-05-10

2005-05-10

Abraham, Fetsum (Department: 2826)

Static information storage and retrieval

Read/write circuit

C365S189080

Reexamination Certificate

active

06891761

ABSTRACT:
A semiconductor device is provided including a circuit employing two or more field-effect transistor that are desired to have equal characteristics, capable of realizing high reliability and superior transistor characteristics. The transistors which are desired to have equal characteristics are placed in the semiconductor device so as to have the same STI trench width (the width of shallow trench isolation adjacent to an active area in which the transistor is formed). By such composition, stress growing in the active area due to the shallow trench isolation is equalized among the transistors, and, thereby, the characteristics of the transistors can be equalized.

REFERENCES:
patent: 4415869 (1983-11-01), Duijkers
patent: 6396088 (2002-05-01), Kitsukawa et al.
patent: A 1 223741 (1989-09-01), None
patent: A 4 42948 (1992-02-01), None
patent: A 8 241922 (1996-09-01), None
patent: A 8 278553 (1996-10-01), None

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