Semiconductor device and manufacture method of the same

Details Semiconductor device and manufacture method of the same Semiconductor device and manufacture method of the same

1996-10-23

1998-05-12

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

148DIG126, H01L 218236

Patent

active

057504296

ABSTRACT:
In a semiconductor device of the insulated gate type, a side wall silicon oxide layer of a desired width is formed on each side wall of a gate electrode and a silicon oxide layer to reduce a distance between the contact end of a source electrode with an N.sup.+ -type source region and the internal end of the gate electrode thereby to decrease the on-resistance even if the impurity concentration of the N.sup.+ -type is determined to be low. Since the impurity concentration of the N.sup.+ -type source region is lower than that of a P.sup.+ -type body region and higher than the surface impurity concentration of a P-type body region, the base width of a parasitic bipolar transistor related to the P-type body region is maintained in a proper value without increasing the depth of the N.sup.+ -type source region in excess.

REFERENCES:
patent: 4777149 (1988-10-01), Tanabe et al.
patent: 4837606 (1989-06-01), Goodman et al.
patent: 4952991 (1990-08-01), Kayama
patent: 5171705 (1992-12-01), Choy
patent: 5179032 (1993-01-01), Quigg
patent: 5234851 (1993-08-01), Korman et al.
patent: 5306654 (1994-04-01), Kometani
patent: 5342797 (1994-08-01), Sapp et al.
patent: 5369045 (1994-11-01), Ng et al.
patent: 5508217 (1996-04-01), Sawada
patent: 5529940 (1996-06-01), Yamamoto et al.
patent: 5631484 (1997-05-01), Tsoi et al.

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