Semiconductor device and its manufacturing method comprising...

Details Semiconductor device and its manufacturing method comprising... Semiconductor device and its manufacturing method comprising...

2005-07-19

2005-07-19

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S206000, C438S212000, C438S268000

Reexamination Certificate

active

06919249

ABSTRACT:
A semiconductor device comprises a semiconductor layer of a first conductivity type (2), a base region (3) formed proximal to the semiconductor layer, a source region (4) selectively placed over the base region, trenches (T), a gate insulating layer (7) and a gate electrode (6) provided on an inner wall of each of the trenches, and a source electrode (9) connected to the source region. The source region is higher in impurity concentration in a contact (4a) with the source electrode than in a contact with the gate insulating layer, and it is also higher in impurity concentration in the contact (4a) with the source electrode than in a contact with the base region.

REFERENCES:
patent: 5021845 (1991-06-01), Hashimoto
patent: 5371024 (1994-12-01), Hieda et al.
patent: 5429970 (1995-07-01), Hong
patent: 5640034 (1997-06-01), Malhi
patent: 6151488 (2000-11-01), Brekelmans
patent: 6188105 (2001-02-01), Kocon et al.
patent: 6262470 (2001-07-01), Lee et al.
patent: 6365942 (2002-04-01), Kocon et al.
patent: 6475864 (2002-11-01), Sato et al.
patent: 6534828 (2003-03-01), Kocon
patent: 6569738 (2003-05-01), Darwish
patent: 6639269 (2003-10-01), Hofmann et al.
patent: 6756272 (2004-06-01), Nakagawa
patent: 9-260663 (1997-10-01), None

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