Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-07-21
2011-10-25
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S437000, C257SE21546
Reexamination Certificate
active
08043918
ABSTRACT:
To manufacture in high productivity a semiconductor device capable of securely achieving element isolation by a trench-type element isolation and capable of effectively preventing potentials of adjacent elements from affecting other nodes, a method of manufacturing the semiconductor device includes: a step of forming a first layer on a substrate; a step of forming a trench by etching the first layer and the substrate; a step of thermally oxidizing an inner wall of the trench; a step of depositing a first conductive film having a film thickness equal to or larger than one half of the trench width of the trench on the substrate including the trench; a step of removing a first conductive film from the first layer by a CMP method and keeping the first conductive film left in only the trench; a step of anisotropically etching the first conductive film within the trench to adjust the height of the conductive film to become lower than the height of the surface of the substrate; a step of depositing an insulating film on the first conductive film by the CVD method to embed the upper part of the first conductive film within the trench; a step of flattening the insulating film by the CMP method; and a step of removing the first layer.
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Horita Katsuyuki
Ishibashi Masato
Kitazawa Masashi
Kuroi Takashi
Chaudhari Chandra
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Renesas Electronics Corporation
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